Chemical vapor deposition of germanium-rich CrGe_x nanowires

• Vladislav Dřínek,
• Stanislav Tiagulskyi,
• Roman Yatskiv,
• Jan Grym,
• Radek Fajgar,
• Věra Jandová,
• Martin Koštejn and
• Jaroslav Kupčík

Beilstein J. Nanotechnol. 2021, 12, 1365–1371, doi:10.3762/bjnano.12.100

• , nanowires grew in a tapering manner (Figure 1b and Supporting Information File 1, Figure S2). Linear EDX analysis (Figure 2) and elemental mapping (Supporting Information File 1, Figure S3) of a single nanowire showed that it was composed of Cr, Ge, O (from an oxidized surface) and C (a standard impurity in

• measurement unit with the bias applied to the tip, while the substrate was grounded. (a) SEM image of a Cr/Ge deposit with nanowires (b) growing in a tapering manner. Linear EDX analysis along a single nanowire. (a, c) Dark-field HRTEM images, (b) SAED of a nanowire piece, and (d) HRTEM image of a NW top

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

• Jakub Kierdaszuk,
• Piotr Kaźmierczak,
• Justyna Grzonka,
• Aleksandra Krajewska,
• Aleksandra Przewłoka,
• Wawrzyniec Kaszub,
• Zbigniew R. Zytkiewicz,
• Marta Sobanska,
• Maria Kamińska,
• Andrzej Wysmołek and
• Aneta Drabińska

Beilstein J. Nanotechnol. 2021, 12, 566–577, doi:10.3762/bjnano.12.47

• individual NWs. Larger wrinkles are observed in graphene on NWs with variations of 100 nm in height (Figure 1b, Figure 1e). Nevertheless, due to the higher density of supporting points, graphene is still attached to every single nanowire including those which are slightly lower in height. The most expanded

Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

• Jianqi Dong,
• Liang Chen,
• Yuqing Yang and
• Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1847–1853, doi:10.3762/bjnano.11.166

• heterojunction (left panel, b1) and HRTEM image of the corresponding GaN layer (right panel, b2). (c) XRD 2θ scan of the epitaxial structure in the region of the (002) reflection. (a) Schematic diagrams after ICP dry etching, (b) during EC wet etching, (c) and of a single nanowire. (d) SEM image of a AlGaN/AlN

Superconductor–insulator transition in capacitively coupled superconducting nanowires

• Alex Latyshev,
• Andrew G. Semenov and
• Andrei D. Zaikin

Beilstein J. Nanotechnol. 2020, 11, 1402–1408, doi:10.3762/bjnano.11.124

• properties can be investigated in exactly the same manner as was done in [5] in the case of a single nanowire. Generalization of the technique [5] to the case of two capacitively coupled superconducting nanowires is straightforward. For a linear resistance of the ith wire Ri(T) and for λii > 2 (or for any

Gas sensing properties of individual SnO₂ nanowires and SnO₂ sol–gel nanocomposites

• Alexey V. Shaposhnik,
• Dmitry A. Shaposhnik,
• Sergey Yu. Turishchev,
• Olga A. Chuvenkova,
• Stanislav V. Ryabtsev,
• Alexey A. Vasiliev,
• Xavier Vilanova,
• Francisco Hernandez-Ramirez and
• Joan R. Morante

Beilstein J. Nanotechnol. 2019, 10, 1380–1390, doi:10.3762/bjnano.10.136

• contamination on the sample surfaces. Device manufacture Manufacture of the device based on a single nanowire Individual nanowires were electrically contacted by direct focused-ion beam (FIB) platinum deposition, using an FEI dual beam Strata 235 instrument combined with a metal–organic injector to deposit

• nanowires prepared by the dry gas-transport method. Conclusion The presented results demonstrate that the sensors made by sol–gel technology are currently more sensitive in comparison with single-nanowire-based devices over a wide range of ammonia concentrations. Furthermore, they are simpler and cheaper to

Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble

• David van Treeck,
• Johannes Ledig,
• Gregor Scholz,
• Jonas Lähnemann,
• Mattia Musolino,
• Abbes Tahraoui,
• Oliver Brandt,
• Andreas Waag,
• Henning Riechert and
• Lutz Geelhaar

Beilstein J. Nanotechnol. 2019, 10, 1177–1187, doi:10.3762/bjnano.10.117

• employed here a very powerful analysis tool. Keywords: electroluminescence; external quantum efficiency (EQE); nanowire LED; single nanowire; current–voltage; Introduction Group-III nitride nanowire (NW) ensembles have been employed for a wide range of applications, especially optoelectronic devices [1

• where only one major, slightly asymmetric emission band was visible. A similar band profile of the EL spectra of single NWs has already been reported in the literature [4][7]. Hence, we assume that spectrum C shows the luminescence of a single nanowire LED. In order to better understand the emission

Magnetism and magnetoresistance of single Ni–Cu alloy nanowires

• Andreea Costas,
• Camelia Florica,
• Elena Matei,
• Maria Eugenia Toimil-Molares,
• Ionel Stavarache,
• Andrei Kuncser,
• Victor Kuncser and
• Ionut Enculescu

Beilstein J. Nanotechnol. 2018, 9, 2345–2355, doi:10.3762/bjnano.9.219

• magnetometers, but the overall magnetic behavior of the assembly cannot be straightforwardly connected to the magnetic behavior of the single nanowire. It depends not only on the size dispersion of the nanowires but also on their geometrical configuration and mutual magnetic interaction among the single

• experiment). The much lower coercive field in case of the nanowires array (about 0.01 T) as compared to the switching field of a single nanowire (of the order of 0.1 T) in parallel geometry, as well as the much smoother reversal in the first case hint to a progressive rotation of magnetic moments of

• magnetization obtained by micromagnetic simulations of a single nanowire. The average magnetic moment of a Ni atom as a function of the Ni content as obtained from magnetization measurements on nanowire arrays is presented in the lower inset. The magnetoresistive effect as a function of the Ni content as

Template based precursor route for the synthesis of CuInSe₂ nanorod arrays for potential solar cell applications

• Mikhail Pashchanka,
• Jonas Bang,
• Niklas S. A. Gora,
• Ildiko Balog,
• Rudolf C. Hoffmann and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2013, 4, 868–874, doi:10.3762/bjnano.4.98

• VLS synthesis of CuInSe2 nanowires (by Cu impregnation of In2Se3 nanowires) and the construction of a single-nanowire CIS/CdS core–shell device [4]. However, the authors estimated the efficiency of their solar cell to be below 1%, and the construction of a larger scale device with this approach still

Characterization and properties of micro- and nanowires of controlled size, composition, and geometry fabricated by electrodeposition and ion-track technology

• Maria Eugenia Toimil-Molares

Beilstein J. Nanotechnol. 2012, 3, 860–883, doi:10.3762/bjnano.3.97

• crystallinity of the nanostructures [7][8][9]. The investigation of size effects requires methods to synthesize nanowires under controlled conditions and with tailored characteristics. Moreover, to characterize physical and chemical properties at the single-nanowire level requires appropriate techniques. In the

• fabrication of a single-pore membrane by ion irradiation and etching; (b) deposition of a suitable substrate; (c) electrochemical growth of a single nanowire (e.g., Cu, Au, Bi) and continuation of the deposition process until a micrometre-sized cap grows on top of the wire; and (d) contacting of the embedded

Ultraviolet photodetection of flexible ZnO nanowire sheets in polydimethylsiloxane polymer

• Jinzhang Liu,
• Nunzio Motta and
• Soonil Lee

Beilstein J. Nanotechnol. 2012, 3, 353–359, doi:10.3762/bjnano.3.41

• adsorption and desorption of oxygen molecules [4]. In vacuum, ZnO nanowires show a prolonged UV photoresponse time and lowered responsivity [5]. So far, many UV photosensors have been made from ZnO one-dimensional nanostructures with various configurations, for sensing elements, such as single-nanowire